LPCVD
Low Pressure Chemical Vapor Deposition
Overview
Explore why different LPCVD processes require different temperatures. Learn the chemistry behind SiO₂ (400-500°C), Si₃N₄ (700-780°C), and Poly-Si (580-650°C) depositions.
What it demonstrates
- SiO₂, Si₃N₄, Poly-Si process modes
- Temperature-dependent chemistry
- Activation energy principles
Interactive Demo: LPCVD Process Modes
Explore three different LPCVD processes (SiO₂, Si₃N₄, Poly-Si) and understand why each requires different temperatures based on precursor chemistry and activation energy.
LPCVD SiO₂ Deposition Simulator
Low Pressure Chemical Vapor Deposition
Gas Control
SiH₄
100 sccm
O₂
200 sccm
N₂
500 sccm
Heater Zones
Zone 1OFF
25°C
Zone 2OFF
25°C
Zone 3OFF
25°C
Zone 4OFF
25°C
Time
00:00
Thickness
0.0nm
Avg Temp
25°C
Dep. Rate
0.0nm/m
R.I. (n)
---
Stress
---MPa
Density
---g/cm³
Uniformity
---
Dielectric (k)---
Etch Rate (BOE)---
Pressure0.80 Torr
O₂/SiH₄ Ratio---
SiH₄100 sccm
O₂200 sccm
N₂500 sccm
More advanced simulations including batch uniformity optimization and gas flow modeling are available under institutional access.
Access this module
This module is available under an institutional education license. Request access for your organization.
Related topics
thin-filmthermaldeposition