Ion Implantation
Precise Doping Control
Overview
Study ion implantation processes including range calculations, dose control, and the effects of energy on dopant distribution.
What it demonstrates
- Range and straggle calculation
- Dose-energy relationships
- Damage and annealing
Interactive Demo: Ion Implantation Simulator
Explore ion implantation process with real-time visualization. Adjust parameters to see concentration profiles and wafer cross-section structure.
Ion Beam System Diagram
Parameters
Calculated Values
7° Tilt: Standard implant angle to prevent channeling effect where ions travel deep along crystal channels.
Concentration Profile
Wafer Cross-Section
Key Concepts
Energy → Depth
Higher energy = deeper penetration (Rp). Adjust energy to control junction depth.
Dose → Concentration
Dose controls total dopant count. Peak concentration scales with dose.
Gaussian Profile
C(x) = (Φ/√2πΔRp) × exp[-(x-Rp)²/2ΔRp²]
Mass Effect
Heavier ions (As) stop faster than lighter ions (B) at same energy.
Interactive Demo: Crystal Damage & Recovery
Visualize how ion implantation damages the silicon crystal lattice and how thermal annealing repairs the damage while activating dopants.
Physics Parameters
Process Control
Usage Guide
Set ion energy, flux, and other physics parameters
Watch ions penetrate and damage the crystal lattice
Pause implantation at desired dose level
Observe lattice recovery and dopant activation
More advanced simulations and analysis tools are available under institutional access.
Access this module
This module is available under an institutional education license. Request access for your organization.